Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
Default Photo
RFQ
VIEW
RFQ
1,488
In-stock
Vishay Siliconix MOSFET P-CH 12V 2.9A 4-MICROFOOT - Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 4-XFBGA 4-MICRO FOOT® (0.8x0.8) 900mW (Ta) P-Channel 12V 2.9A (Ta) 80 mOhm @ 1.5A, 3.7V 900mV @ 250µA 17nC @ 8V 650pF @ 6V 1.5V, 3.7V ±8V
SI8806DB-T2-E1
RFQ
VIEW
RFQ
2,370
In-stock
Vishay Siliconix MOSFET N-CH 12V MICROFOOT TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 4-XFBGA 4-Microfoot 500mW (Ta) N-Channel 12V - 43 mOhm @ 1A, 4.5V 1V @ 250µA 17nC @ 8V - 1.8V, 4.5V ±8V
SI8806DB-T2-E1
RFQ
VIEW
RFQ
1,677
In-stock
Vishay Siliconix MOSFET N-CH 12V MICROFOOT TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 4-XFBGA 4-Microfoot 500mW (Ta) N-Channel 12V - 43 mOhm @ 1A, 4.5V 1V @ 250µA 17nC @ 8V - 1.8V, 4.5V ±8V
SI8806DB-T2-E1
RFQ
VIEW
RFQ
1,497
In-stock
Vishay Siliconix MOSFET N-CH 12V MICROFOOT TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 4-XFBGA 4-Microfoot 500mW (Ta) N-Channel 12V - 43 mOhm @ 1A, 4.5V 1V @ 250µA 17nC @ 8V - 1.8V, 4.5V ±8V