- Series :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 103 mOhm @ 1.5A, 4.5V (1)
- 130 mOhm @ 1A, 4V (1)
- 136 mOhm @ 1A, 2.5V (1)
- 150 mOhm @ 1.06A, 4.5V (1)
- 150 mOhm @ 950mA, 4.5V (1)
- 156 mOhm @ 1.18A, 4.5V (2)
- 165 mOhm @ 870mA, 4.5V (2)
- 32 mOhm @ 3.5A, 4.5V (1)
- 40.7 mOhm @ 3A, 4.5V (1)
- 59 mOhm @ 3A, 4.5V (1)
- 78 mOhm @ 1.8A, 4.5V (1)
- 89 mOhm @ 1.32A, 4.5V (2)
- 95 mOhm @ 1.32A, 4.5V (1)
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
16 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||
|
VIEW |
1,835
In-stock
|
Vishay Siliconix | MOSFET N-CH 20V SC-89-6 | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SC-89-6 | 236mW (Ta) | N-Channel | 20V | - | 89 mOhm @ 1.32A, 4.5V | 950mV @ 250µA | 8.7nC @ 5V | 400pF @ 10V | 1.8V, 4.5V | ±8V | |||
|
|
VIEW |
1,163
In-stock
|
Vishay Siliconix | MOSFET P-CH 12V 0.87A SC89 | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SC-89-6 | 170mW (Ta) | P-Channel | 12V | 870mA (Ta) | 165 mOhm @ 870mA, 4.5V | 450mV @ 250µA (Min) | 6nC @ 4.5V | - | 1.8V, 4.5V | ±8V | |||
|
|
VIEW |
1,819
In-stock
|
Vishay Siliconix | MOSFET P-CH 20V 1.06A SOT563F | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SC-89-6 | 236mW (Ta) | P-Channel | 20V | - | 150 mOhm @ 1.06A, 4.5V | 950mV @ 250µA | 9.3nC @ 5V | 375pF @ 10V | 1.8V, 4.5V | ±8V | |||
|
|
VIEW |
2,260
In-stock
|
Vishay Siliconix | MOSFET P-CH 12V 1.18A SOT563F | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SC-89-6 | 236mW (Ta) | P-Channel | 12V | - | 156 mOhm @ 1.18A, 4.5V | 950mV @ 250µA | 10.8nC @ 5V | 480pF @ 6V | 1.8V, 4.5V | ±8V | |||
|
|
VIEW |
3,499
In-stock
|
Vishay Siliconix | MOSFET N-CH 20V 1.32A SOT563F | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SC-89-6 | 236mW (Ta) | N-Channel | 20V | - | 89 mOhm @ 1.32A, 4.5V | 950mV @ 250µA | 8.7nC @ 5V | 400pF @ 10V | 1.8V, 4.5V | ±8V | |||
|
|
VIEW |
1,003
In-stock
|
Vishay Siliconix | MOSFET P-CH 12V 0.87A SOT563F | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SC-89-6 | 170mW (Ta) | P-Channel | 12V | 870mA (Ta) | 165 mOhm @ 870mA, 4.5V | 450mV @ 250µA (Min) | 6nC @ 4.5V | - | 1.8V, 4.5V | ±8V | |||
|
|
VIEW |
3,990
In-stock
|
Vishay Siliconix | MOSFET N-CH 12V 1.32A SC89-6 | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SC-89-6 | 236mW (Ta) | N-Channel | 12V | - | 95 mOhm @ 1.32A, 4.5V | 1V @ 250µA | 8.57nC @ 5V | 480pF @ 6V | 1.8V, 4.5V | ±8V | |||
|
VIEW |
1,037
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 1.8A ES6 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 (1.6x1.6) | 500mW (Ta) | P-Channel | 20V | 1.8A (Ta) | 136 mOhm @ 1A, 2.5V | 1V @ 1mA | 10.6nC @ 4V | 568pF @ 10V | 1.5V, 2.5V | ±8V | |||
|
|
VIEW |
1,973
In-stock
|
Vishay Siliconix | MOSFET P-CH 12V 1.18A SC89-6 | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SC-89-6 | 236mW (Ta) | P-Channel | 12V | - | 156 mOhm @ 1.18A, 4.5V | 950mV @ 250µA | 10.8nC @ 5V | 480pF @ 6V | 1.8V, 4.5V | ±8V | |||
|
VIEW |
1,141
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P CH 20V 2.6A ES6 | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 | 500mW (Ta) | P-Channel | 20V | 2.6A (Ta) | 103 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.7nC @ 4.5V | 290pF @ 10V | 1.5V, 4.5V | ±8V | |||
|
|
VIEW |
2,044
In-stock
|
Vishay Siliconix | MOSFET P-CH 20V SC89-6 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SC-89-6 | 330mW (Ta) | P-Channel | 20V | - | 78 mOhm @ 1.8A, 4.5V | 1V @ 250µA | 31.1nC @ 8V | 965pF @ 10V | 1.5V, 4.5V | ±8V | |||
|
|
VIEW |
3,305
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P CH 20V 3.4A ES6 | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 | 500mW (Ta) | P-Channel | 20V | 3.4A (Ta) | 59 mOhm @ 3A, 4.5V | 1V @ 1mA | 10.4nC @ 4.5V | 630pF @ 10V | 1.5V, 4.5V | ±8V | |||
|
|
VIEW |
1,594
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 2A ES6 | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 (1.6x1.6) | 500mW (Ta) | P-Channel | 20V | 2A (Ta) | 130 mOhm @ 1A, 4V | 1V @ 1mA | - | 335pF @ 10V | 1.8V, 4V | ±8V | |||
|
VIEW |
1,440
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CHANNEL 12V 4.8A ES6 | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C | Surface Mount | SOT-563, SOT-666 | ES6 | 700mW (Ta) | P-Channel | 12V | 4.8A (Ta) | 32 mOhm @ 3.5A, 4.5V | 1V @ 1mA | 12.7nC @ 4.5V | 1040pF @ 12V | 1.5V, 4.5V | ±8V | |||
|
|
VIEW |
1,664
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 4A ES6 | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 | 500mW (Ta) | P-Channel | 20V | 4A (Ta) | 40.7 mOhm @ 3A, 4.5V | 1V @ 1mA | 14.1nC @ 4.5V | 970pF @ 10V | 1.5V, 4.5V | ±8V | |||
|
VIEW |
1,670
In-stock
|
ON Semiconductor | MOSFET P-CH 20V 0.86A SOT-563 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 | 170mW (Ta) | P-Channel | 20V | 860mA (Ta) | 150 mOhm @ 950mA, 4.5V | 1V @ 250µA | 5.6nC @ 4.5V | 458pF @ 16V | 1.8V, 4.5V | ±8V | |||
