- Manufacture :
- Packaging :
- Supplier Device Package :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
3,298
In-stock
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Rohm Semiconductor | MOSFET N-CH 20V 0.15A VML0806 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, No Lead | VML0806 | 100mW (Ta) | N-Channel | - | 20V | 150mA (Ta) | 2 Ohm @ 150mA, 4.5V | 1V @ 100µA | - | 12pF @ 10V | 1.2V, 4.5V | ±8V | |||
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|
VIEW |
2,777
In-stock
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Rohm Semiconductor | MOSFET N-CH 20V 0.15A VML0806 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, No Lead | VML0806 | 100mW (Ta) | N-Channel | - | 20V | 150mA (Ta) | 2 Ohm @ 150mA, 4.5V | 1V @ 100µA | - | 12pF @ 10V | 1.2V, 4.5V | ±8V | |||
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|
VIEW |
2,630
In-stock
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Rohm Semiconductor | MOSFET N-CH 20V 0.15A VML0806 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, No Lead | VML0806 | 100mW (Ta) | N-Channel | - | 20V | 150mA (Ta) | 2 Ohm @ 150mA, 4.5V | 1V @ 100µA | - | 12pF @ 10V | 1.2V, 4.5V | ±8V | |||
|
VIEW |
2,655
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 2A CST3B | U-MOSVI | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, No Lead | CST3B | - | P-Channel | - | 20V | 2A (Ta) | 103 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.7nC @ 4.5V | 290pF @ 10V | 1.5V, 4.5V | ±8V | |||
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|
VIEW |
2,079
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 2A CST3B | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, No Lead | CST3B | - | P-Channel | - | 20V | 2A (Ta) | 103 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.7nC @ 4.5V | 290pF @ 10V | 1.5V, 4.5V | ±8V | |||
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|
VIEW |
3,117
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 2A CST3B | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, No Lead | CST3B | - | P-Channel | - | 20V | 2A (Ta) | 103 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.7nC @ 4.5V | 290pF @ 10V | 1.5V, 4.5V | ±8V | |||
