Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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NTLJS1102PTBG
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2,710
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ON Semiconductor MOSFET P-CH 8V 3.7A 6-WDFN - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-WDFN (2x2) 700mW (Ta) P-Channel - 8V 3.7A (Ta) 36 mOhm @ 6.2A, 4.5V 720mV @ 250µA 25nC @ 4.5V 1585pF @ 4V 1.2V, 4.5V ±6V
NTLJS1102PTAG
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1,529
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ON Semiconductor MOSFET P-CH 8V 3.7A 6-WDFN - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-WDFN (2x2) 700mW (Ta) P-Channel - 8V 3.7A (Ta) 36 mOhm @ 6.2A, 4.5V 720mV @ 250µA 25nC @ 4.5V 1585pF @ 4V 1.2V, 4.5V ±6V
NTLJS2103PTAG
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3,045
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ON Semiconductor MOSFET P-CH 12V 3.5A 6-WDFN - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-WDFN (2x2) 700mW (Ta) P-Channel - 12V 3.5A (Ta) 40 mOhm @ 3A, 4.5V 800mV @ 250µA 15nC @ 4.5V 1157pF @ 6V 1.2V, 4.5V ±8V
NTLJS2103PTBG
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3,549
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ON Semiconductor MOSFET P-CH 12V 3.5A 6-WDFN µCool™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-WDFN (2x2) 700mW (Ta) P-Channel - 12V 3.5A (Ta) 40 mOhm @ 3A, 4.5V 800mV @ 250µA 15nC @ 4.5V 1157pF @ 6V 1.2V, 4.5V ±8V
NTLJS2103PTBG
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1,826
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ON Semiconductor MOSFET P-CH 12V 3.5A 6-WDFN µCool™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-WDFN (2x2) 700mW (Ta) P-Channel - 12V 3.5A (Ta) 40 mOhm @ 3A, 4.5V 800mV @ 250µA 15nC @ 4.5V 1157pF @ 6V 1.2V, 4.5V ±8V
NTLJS2103PTBG
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RFQ
1,518
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ON Semiconductor MOSFET P-CH 12V 3.5A 6-WDFN µCool™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-WDFN (2x2) 700mW (Ta) P-Channel - 12V 3.5A (Ta) 40 mOhm @ 3A, 4.5V 800mV @ 250µA 15nC @ 4.5V 1157pF @ 6V 1.2V, 4.5V ±8V
MCMN2012-TP
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RFQ
2,029
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Micro Commercial Co MOSFET N-CH 20V 12A DFN202 - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-WDFN Exposed Pad DFN2020-6J - N-Channel - 20V 12A (Ta) 11 mOhm @ 9.7A, 4.5V 1V @ 250µA 32nC @ 5V 1800pF @ 4V 1.2V, 4.5V ±10V
MCMN2012-TP
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RFQ
667
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Micro Commercial Co MOSFET N-CH 20V 12A DFN202 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-WDFN Exposed Pad DFN2020-6J - N-Channel - 20V 12A (Ta) 11 mOhm @ 9.7A, 4.5V 1V @ 250µA 32nC @ 5V 1800pF @ 4V 1.2V, 4.5V ±10V
MCMN2012-TP
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3,261
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Micro Commercial Co MOSFET N-CH 20V 12A DFN202 - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-WDFN Exposed Pad DFN2020-6J - N-Channel - 20V 12A (Ta) 11 mOhm @ 9.7A, 4.5V 1V @ 250µA 32nC @ 5V 1800pF @ 4V 1.2V, 4.5V ±10V
SSM6J505NU,LF
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RFQ
754
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Toshiba Semiconductor and Storage MOSFET P CH 12V 12A UDFN6B U-MOSVI Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-UDFNB (2x2) 1.25W (Ta) P-Channel - 12V 12A (Ta) 12 mOhm @ 4A, 4.5V 1V @ 1mA 37.6nC @ 4.5V 2700pF @ 10V 1.2V, 4.5V ±6V
SSM6J505NU,LF
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RFQ
1,824
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Toshiba Semiconductor and Storage MOSFET P CH 12V 12A UDFN6B U-MOSVI Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-UDFNB (2x2) 1.25W (Ta) P-Channel - 12V 12A (Ta) 12 mOhm @ 4A, 4.5V 1V @ 1mA 37.6nC @ 4.5V 2700pF @ 10V 1.2V, 4.5V ±6V
SSM6J505NU,LF
RFQ
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RFQ
618
In-stock
Toshiba Semiconductor and Storage MOSFET P CH 12V 12A UDFN6B U-MOSVI Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-UDFNB (2x2) 1.25W (Ta) P-Channel - 12V 12A (Ta) 12 mOhm @ 4A, 4.5V 1V @ 1mA 37.6nC @ 4.5V 2700pF @ 10V 1.2V, 4.5V ±6V