Power Dissipation (Max) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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RW1C015UNT2R
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Rohm Semiconductor MOSFET N-CH 20V 1.5A WEMT6 - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-563, SOT-666 6-WEMT 400mW (Ta) N-Channel - 20V 1.5A (Ta) 180 mOhm @ 1.5A, 4.5V 1V @ 1mA 1.8nC @ 4.5V 110pF @ 10V 1.5V, 4.5V ±10V
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Rohm Semiconductor MOSFET N-CH 20V 1.5A WEMT6 - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-563, SOT-666 6-WEMT 700mW (Ta) N-Channel Schottky Diode (Isolated) 20V 1.5A (Ta) 180 mOhm @ 1.5A, 4.5V 1V @ 1mA 1.8nC @ 4.5V 110pF @ 10V 1.5V, 4.5V ±10V