Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Vishay Siliconix MOSFET P-CH 12V 12A SC70-6 TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SC-70-6 PowerPAK® SC-70-6 Single 19W (Tc) P-Channel - 12V 12A (Tc) 29 mOhm @ 6.7A, 4.5V 1V @ 250µA 57nC @ 8V 1800pF @ 10V 1.5V, 4.5V ±8V
SSM6J502NU,LF(T
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1,759
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Toshiba Semiconductor and Storage MOSFET P CH 20V 6A 2-2AA1A U-MOSVI Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-UDFNB (2x2) 1W (Ta) P-Channel - 20V 6A (Ta) 23.1 mOhm @ 4A, 4.5V 1V @ 1mA 24.8nC @ 4.5V 1800pF @ 10V 1.5V, 4.5V ±8V
SSM6J502NU,LF(T
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Toshiba Semiconductor and Storage MOSFET P CH 20V 6A 2-2AA1A U-MOSVI Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-UDFNB (2x2) 1W (Ta) P-Channel - 20V 6A (Ta) 23.1 mOhm @ 4A, 4.5V 1V @ 1mA 24.8nC @ 4.5V 1800pF @ 10V 1.5V, 4.5V ±8V
SSM6J502NU,LF(T
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3,883
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Toshiba Semiconductor and Storage MOSFET P CH 20V 6A 2-2AA1A U-MOSVI Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-UDFNB (2x2) 1W (Ta) P-Channel - 20V 6A (Ta) 23.1 mOhm @ 4A, 4.5V 1V @ 1mA 24.8nC @ 4.5V 1800pF @ 10V 1.5V, 4.5V ±8V
SSM3J130TU,LF
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3,124
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Toshiba Semiconductor and Storage MOSFET P-CH 20V 4.4A UFM U-MOSVI Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 3-SMD, Flat Leads UFM 500mW (Ta) P-Channel - 20V 4.4A (Ta) 25.8 mOhm @ 4A, 4.5V 1V @ 1mA 24.8nC @ 4.5V 1800pF @ 10V 1.5V, 4.5V ±8V
SSM3J130TU,LF
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3,249
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Toshiba Semiconductor and Storage MOSFET P-CH 20V 4.4A UFM U-MOSVI Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 3-SMD, Flat Leads UFM 500mW (Ta) P-Channel - 20V 4.4A (Ta) 25.8 mOhm @ 4A, 4.5V 1V @ 1mA 24.8nC @ 4.5V 1800pF @ 10V 1.5V, 4.5V ±8V
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1,184
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Toshiba Semiconductor and Storage MOSFET P-CH 20V 4.4A UFM U-MOSVI Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 3-SMD, Flat Leads UFM 500mW (Ta) P-Channel - 20V 4.4A (Ta) 25.8 mOhm @ 4A, 4.5V 1V @ 1mA 24.8nC @ 4.5V 1800pF @ 10V 1.5V, 4.5V ±8V
SIA413DJ-T1-GE3
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Vishay Siliconix MOSFET P-CH 12V 12A SC70-6 TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SC-70-6 PowerPAK® SC-70-6 Single 3.5W (Ta), 19W (Tc) P-Channel - 12V 12A (Tc) 29 mOhm @ 6.7A, 4.5V 1V @ 250µA 57nC @ 8V 1800pF @ 10V 1.5V, 4.5V ±8V
SIA413DJ-T1-GE3
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1,566
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Vishay Siliconix MOSFET P-CH 12V 12A SC70-6 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SC-70-6 PowerPAK® SC-70-6 Single 3.5W (Ta), 19W (Tc) P-Channel - 12V 12A (Tc) 29 mOhm @ 6.7A, 4.5V 1V @ 250µA 57nC @ 8V 1800pF @ 10V 1.5V, 4.5V ±8V
SIA413DJ-T1-GE3
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665
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Vishay Siliconix MOSFET P-CH 12V 12A SC70-6 TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SC-70-6 PowerPAK® SC-70-6 Single 3.5W (Ta), 19W (Tc) P-Channel - 12V 12A (Tc) 29 mOhm @ 6.7A, 4.5V 1V @ 250µA 57nC @ 8V 1800pF @ 10V 1.5V, 4.5V ±8V