- Manufacture :
- Series :
- Packaging :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
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15 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,961
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 20V 1.4A CST3 | U-MOSVII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-101, SOT-883 | CST3 | 500mW (Ta) | N-Channel | - | 20V | 1.4A (Ta) | 235 mOhm @ 800mA, 4.5V | 1V @ 1mA | 1nC @ 4.5V | 55pF @ 10V | 1.5V, 4.5V | ±8V | |||
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VIEW |
755
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 20V 1.4A CST3 | U-MOSVII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-101, SOT-883 | CST3 | 500mW (Ta) | N-Channel | - | 20V | 1.4A (Ta) | 235 mOhm @ 800mA, 4.5V | 1V @ 1mA | 1nC @ 4.5V | 55pF @ 10V | 1.5V, 4.5V | ±8V | |||
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VIEW |
1,059
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 20V 1.4A CST3 | U-MOSVII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-101, SOT-883 | CST3 | 500mW (Ta) | N-Channel | - | 20V | 1.4A (Ta) | 235 mOhm @ 800mA, 4.5V | 1V @ 1mA | 1nC @ 4.5V | 55pF @ 10V | 1.5V, 4.5V | ±8V | |||
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VIEW |
3,153
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 20V 0.8A SSM | U-MOSVII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-75, SOT-416 | SSM | 150mW (Ta) | N-Channel | - | 20V | 800mA (Ta) | 235 mOhm @ 800mA, 4.5V | 1V @ 1mA | 1nC @ 4.5V | 55pF @ 10V | 1.5V, 4.5V | ±8V | |||
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VIEW |
3,136
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 20V 0.8A SSM | U-MOSVII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-75, SOT-416 | SSM | 150mW (Ta) | N-Channel | - | 20V | 800mA (Ta) | 235 mOhm @ 800mA, 4.5V | 1V @ 1mA | 1nC @ 4.5V | 55pF @ 10V | 1.5V, 4.5V | ±8V | |||
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VIEW |
988
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 20V 0.8A SSM | U-MOSVII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-75, SOT-416 | SSM | 150mW (Ta) | N-Channel | - | 20V | 800mA (Ta) | 235 mOhm @ 800mA, 4.5V | 1V @ 1mA | 1nC @ 4.5V | 55pF @ 10V | 1.5V, 4.5V | ±8V | |||
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VIEW |
2,444
In-stock
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Toshiba Semiconductor and Storage | MOSFET NCH 20V 800MA CST3 | U-MOSVII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TA) | Surface Mount | 3-XFDFN | CST3 | 500mW (Ta) | N-Channel | - | 20V | 800mA (Ta) | 235 mOhm @ 800mA, 4.5V | 1V @ 1mA | 1nC @ 4.5V | 55pF @ 10V | 1.5V, 4.5V | ±8V | |||
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|
VIEW |
2,917
In-stock
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Toshiba Semiconductor and Storage | MOSFET NCH 20V 800MA CST3 | U-MOSVII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TA) | Surface Mount | 3-XFDFN | CST3 | 500mW (Ta) | N-Channel | - | 20V | 800mA (Ta) | 235 mOhm @ 800mA, 4.5V | 1V @ 1mA | 1nC @ 4.5V | 55pF @ 10V | 1.5V, 4.5V | ±8V | |||
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VIEW |
3,733
In-stock
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Toshiba Semiconductor and Storage | MOSFET NCH 20V 800MA CST3 | U-MOSVII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TA) | Surface Mount | 3-XFDFN | CST3 | 500mW (Ta) | N-Channel | - | 20V | 800mA (Ta) | 235 mOhm @ 800mA, 4.5V | 1V @ 1mA | 1nC @ 4.5V | 55pF @ 10V | 1.5V, 4.5V | ±8V | |||
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VIEW |
3,992
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 20V 0.8A VESM | U-MOSVII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-723 | VESM | 150mW (Ta) | N-Channel | - | 20V | 800mA (Ta) | 235 mOhm @ 800mA, 4.5V | 1V @ 1mA | 1nC @ 4.5V | 55pF @ 10V | 1.5V, 4.5V | ±8V | |||
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VIEW |
1,929
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 20V 0.8A VESM | U-MOSVII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-723 | VESM | 150mW (Ta) | N-Channel | - | 20V | 800mA (Ta) | 235 mOhm @ 800mA, 4.5V | 1V @ 1mA | 1nC @ 4.5V | 55pF @ 10V | 1.5V, 4.5V | ±8V | |||
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|
VIEW |
762
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 20V 0.8A VESM | U-MOSVII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-723 | VESM | 150mW (Ta) | N-Channel | - | 20V | 800mA (Ta) | 235 mOhm @ 800mA, 4.5V | 1V @ 1mA | 1nC @ 4.5V | 55pF @ 10V | 1.5V, 4.5V | ±8V | |||
|
VIEW |
1,479
In-stock
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Vishay Siliconix | MOSFET P-CH 20V 500MA PWRPAK0806 | TrenchFET® Gen III | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 0806 | PowerPAK® 0806 | 1.25W (Ta) | P-Channel | - | 20V | 500mA (Ta) | 1.25 Ohm @ 300mA, 4.5V | 900mV @ 250µA | 1nC @ 4.5V | 31pF @ 10V | 1.5V, 4.5V | ±8V | |||
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VIEW |
833
In-stock
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Vishay Siliconix | MOSFET P-CH 20V 500MA PWRPAK0806 | TrenchFET® Gen III | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 0806 | PowerPAK® 0806 | 1.25W (Ta) | P-Channel | - | 20V | 500mA (Ta) | 1.25 Ohm @ 300mA, 4.5V | 900mV @ 250µA | 1nC @ 4.5V | 31pF @ 10V | 1.5V, 4.5V | ±8V | |||
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VIEW |
3,324
In-stock
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Vishay Siliconix | MOSFET P-CH 20V 500MA PWRPAK0806 | TrenchFET® Gen III | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 0806 | PowerPAK® 0806 | 1.25W (Ta) | P-Channel | - | 20V | 500mA (Ta) | 1.25 Ohm @ 300mA, 4.5V | 900mV @ 250µA | 1nC @ 4.5V | 31pF @ 10V | 1.5V, 4.5V | ±8V | |||
