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- Supplier Device Package :
- Power Dissipation (Max) :
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9 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,539
In-stock
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NXP USA Inc. | MOSFET N-CH 20V 1A TO-236AB | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 325mW (Ta), 1.14W (Tc) | N-Channel | 20V | 1A (Ta) | 165 mOhm @ 1A, 4.5V | 1V @ 250µA | 1.65nC @ 4.5V | 83pF @ 10V | 1.8V, 4.5V | ±8V | |||
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VIEW |
1,423
In-stock
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Alpha & Omega Semiconductor Inc. | MOSFET N-CH 20V 1A SC70-3 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SC-70-3 | 350mW (Ta) | N-Channel | 20V | 1A (Ta) | 225 mOhm @ 1A, 4.5V | 800mV @ 250µA | 1.57nC @ 4.5V | 101pF @ 10V | 1.8V, 4.5V | ±8V | |||
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VIEW |
3,583
In-stock
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Diodes Incorporated | MOSFET N-CH 20V X2-DFN1006-3 | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-XFDFN | X2-DFN1006-3 | 520mW (Ta) | N-Channel | 20V | 1A (Ta) | 320 mOhm @ 500mA, 4.5V | 950mV @ 250µA | 0.89nC @ 4.5V | 71pF @ 10V | 1.8V, 4.5V | ±8V | |||
|
VIEW |
2,245
In-stock
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Nexperia USA Inc. | MOSFET N-CH 20V 1A DFN1006B-3 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-XFDFN | 3-DFN1006B (0.6x1) | 360mW (Ta), 2.7W (Tc) | N-Channel | 20V | 1A (Ta) | 380 mOhm @ 500mA, 4.5V | 950mV @ 250µA | 0.68nC @ 4.5V | 83pF @ 10V | 1.8V, 4.5V | ±8V | |||
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VIEW |
1,734
In-stock
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Nexperia USA Inc. | MOSFET P-CH 20V 1A 3DFN | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-XFDFN | 3-DFN1006B (0.6x1) | 360mW (Ta), 3.125W (Tc) | P-Channel | 20V | 1A (Ta) | 450 mOhm @ 300mA, 4.5V | 950mV @ 250µA | 1.9nC @ 4.5V | 127pF @ 10V | 1.8V, 4.5V | ±8V | |||
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VIEW |
3,863
In-stock
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Nexperia USA Inc. | MOSFET P-CH 20V 1A XQFN3 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SC-101, SOT-883 | DFN1006-3 | 360mW (Ta), 3.125W (Tc) | P-Channel | 20V | 1A (Ta) | 450 mOhm @ 300mA, 4.5V | 950mV @ 250µA | 1.9nC @ 4.5V | 127pF @ 10V | 1.8V, 4.5V | ±8V | |||
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|
VIEW |
1,561
In-stock
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Nexperia USA Inc. | MOSFET N-CH 20V 1A 3DFN | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-XFDFN | 3-DFN1006B (0.6x1) | 360mW (Ta), 2.7W (Tc) | N-Channel | 20V | 1A (Ta) | 380 mOhm @ 500mA, 4.5V | 950mV @ 250µA | 0.68nC @ 4.5V | 83pF @ 10V | 1.8V, 4.5V | ±8V | |||
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|
VIEW |
1,065
In-stock
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Nexperia USA Inc. | MOSFET N-CH 20V 1A XQFN3 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SC-101, SOT-883 | DFN1006-3 | 360mW (Ta), 2.7W (Tc) | N-Channel | 20V | 1A (Ta) | 380 mOhm @ 500mA, 4.5V | 950mV @ 250µA | 0.68nC @ 4.5V | 83pF @ 10V | 1.8V, 4.5V | ±8V | |||
|
VIEW |
1,939
In-stock
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Diodes Incorporated | MOSFET N-CH 20V 1A SOT323 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SOT-323 | 290mW (Ta) | N-Channel | 20V | 1A (Ta) | 450 mOhm @ 600mA, 4.5V | 1V @ 250µA | 0.74nC @ 4.5V | 60.67pF @ 16V | 1.8V, 4.5V | ±6V | |||
