Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
PHB23NQ10LT,118
RFQ
VIEW
RFQ
2,909
In-stock
NXP USA Inc. MOSFET N-CH 100V 23A D2PAK TrenchMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 98W (Tc) N-Channel - 100V 23A (Tc) 72 mOhm @ 10A, 10V 2V @ 1mA 49nC @ 10V 1704pF @ 25V 5V, 10V ±15V
DMTH43M8LPSQ-13
RFQ
VIEW
RFQ
1,781
In-stock
Diodes Incorporated MOSFETN-CH 40VPOWERDI5060-8 Automotive, AEC-Q101 Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN PowerDI5060-8 2.7W (Ta) N-Channel - 40V 22A (Ta), 100A (Tc) 3.3 mOhm @ 20A, 10V 2.5V @ 250µA 49nC @ 10V 3.367nF @ 20V 5V, 10V ±20V
DMTH43M8LPSQ-13
RFQ
VIEW
RFQ
3,135
In-stock
Diodes Incorporated MOSFETN-CH 40VPOWERDI5060-8 Automotive, AEC-Q101 Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN PowerDI5060-8 2.7W (Ta) N-Channel - 40V 22A (Ta), 100A (Tc) 3.3 mOhm @ 20A, 10V 2.5V @ 250µA 49nC @ 10V 3.367nF @ 20V 5V, 10V ±20V
DMTH43M8LPSQ-13
RFQ
VIEW
RFQ
3,687
In-stock
Diodes Incorporated MOSFETN-CH 40VPOWERDI5060-8 Automotive, AEC-Q101 Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN PowerDI5060-8 2.7W (Ta) N-Channel - 40V 22A (Ta), 100A (Tc) 3.3 mOhm @ 20A, 10V 2.5V @ 250µA 49nC @ 10V 3.367nF @ 20V 5V, 10V ±20V