Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRFBC40LCS
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2,281
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Vishay Siliconix MOSFET N-CH 600V 6.2A D2PAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 125W (Tc) N-Channel - 600V 6.2A (Tc) 1.2 Ohm @ 3.7A, 10V 4V @ 250µA 39nC @ 10V 1100pF @ 25V 10V ±30V
IRF740LCS
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RFQ
3,974
In-stock
Vishay Siliconix MOSFET N-CH 400V 10A D2PAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK - N-Channel - 400V 10A (Tc) 550 mOhm @ 6A, 10V 4V @ 250µA 39nC @ 10V 1100pF @ 25V 10V ±30V
IRF840LCS
RFQ
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RFQ
1,369
In-stock
Vishay Siliconix MOSFET N-CH 500V 8A D2PAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.1W (Ta), 125W (Tc) N-Channel - 500V 8A (Tc) 850 mOhm @ 4.8A, 10V 4V @ 250µA 39nC @ 10V 1100pF @ 25V 10V ±30V
IRF840LCSPBF
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RFQ
1,467
In-stock
Vishay Siliconix MOSFET N-CH 500V 8A D2PAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.1W (Ta), 125W (Tc) N-Channel - 500V 8A (Tc) 850 mOhm @ 4.8A, 10V 4V @ 250µA 39nC @ 10V 1100pF @ 25V 10V ±30V
IXTA3N100P
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RFQ
1,773
In-stock
IXYS MOSFET N-CH 1000V 3A TO-263 PolarVHV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (IXTA) 125W (Tc) N-Channel - 1000V 3A (Tc) 4.8 Ohm @ 1.5A, 10V 4.5V @ 250µA 39nC @ 10V 1100pF @ 25V 10V ±20V