Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTA3N120HV
RFQ
VIEW
RFQ
3,333
In-stock
IXYS MOSFET N-CH 1.2KV 3A TO263 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 200W (Tc) N-Channel 1200V 3A (Tc) 4.5 Ohm @ 500mA, 10V 5V @ 250µA 42nC @ 10V 1100pF @ 25V 10V ±20V
IRF9Z34S
RFQ
VIEW
RFQ
3,804
In-stock
Vishay Siliconix MOSFET P-CH 60V 18A D2PAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.7W (Ta), 88W (Tc) P-Channel 60V 18A (Tc) 140 mOhm @ 11A, 10V 4V @ 250µA 34nC @ 10V 1100pF @ 25V 10V ±20V
IXTA3N100P
RFQ
VIEW
RFQ
1,773
In-stock
IXYS MOSFET N-CH 1000V 3A TO-263 PolarVHV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (IXTA) 125W (Tc) N-Channel 1000V 3A (Tc) 4.8 Ohm @ 1.5A, 10V 4.5V @ 250µA 39nC @ 10V 1100pF @ 25V 10V ±20V
IRF7406PBF
RFQ
VIEW
RFQ
2,111
In-stock
Infineon Technologies MOSFET P-CH 30V 5.8A 8-SOIC HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) P-Channel 30V 5.8A (Ta) 45 mOhm @ 2.8A, 10V 1V @ 250µA 59nC @ 10V 1100pF @ 25V 4.5V, 10V ±20V
IRF9Z34SPBF
RFQ
VIEW
RFQ
2,134
In-stock
Vishay Siliconix MOSFET P-CH 60V 18A D2PAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.7W (Ta), 88W (Tc) P-Channel 60V 18A (Tc) 140 mOhm @ 11A, 10V 4V @ 250µA 34nC @ 10V 1100pF @ 25V 10V ±20V