Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IRF6893MTR1PBF
RFQ
VIEW
RFQ
952
In-stock
Infineon Technologies MOSFET N-CH 25V 29A MX HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric MX DIRECTFET™ MX 2.1W (Ta), 69W (Tc) N-Channel - 25V 29A (Ta), 168A (Tc) 1.6 mOhm @ 29A, 10V 2.1V @ 100µA 38nC @ 4.5V 3480pF @ 13V 4.5V, 10V ±16V
IRF8306MTR1PBF
RFQ
VIEW
RFQ
892
In-stock
Infineon Technologies MOSFET N-CH 30V 23A DIRECTFET HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric MX DIRECTFET™ MX 2.1W (Ta), 75W (Tc) N-Channel Schottky Diode (Body) 30V 23A (Ta), 140A (Tc) 2.5 mOhm @ 23A, 10V 2.35V @ 100µA 38nC @ 4.5V 4110pF @ 15V 4.5V, 10V ±20V