Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SI8823EDB-T2-E1
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Vishay Siliconix MOSFET P-CH 20V 2.7A 4-MICROFOOT TrenchFET® Gen III Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 4-XFBGA 4-MICRO FOOT® (0.8x0.8) 900mW (Tc) P-Channel - 20V 2.7A (Tc) 95 mOhm @ 1A, 4.5V 800mV @ 250µA 10nC @ 4.5V 580pF @ 10V 1.5V, 4.5V ±8V
SI8823EDB-T2-E1
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2,591
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Vishay Siliconix MOSFET P-CH 20V 2.7A 4-MICROFOOT TrenchFET® Gen III Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 4-XFBGA 4-MICRO FOOT® (0.8x0.8) 900mW (Tc) P-Channel - 20V 2.7A (Tc) 95 mOhm @ 1A, 4.5V 800mV @ 250µA 10nC @ 4.5V 580pF @ 10V 1.5V, 4.5V ±8V
SI8823EDB-T2-E1
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3,745
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Vishay Siliconix MOSFET P-CH 20V 2.7A 4-MICROFOOT TrenchFET® Gen III Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 4-XFBGA 4-MICRO FOOT® (0.8x0.8) 900mW (Tc) P-Channel - 20V 2.7A (Tc) 95 mOhm @ 1A, 4.5V 800mV @ 250µA 10nC @ 4.5V 580pF @ 10V 1.5V, 4.5V ±8V