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- Operating Temperature :
- Package / Case :
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- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
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9 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GLOBAL STOCKS | ||||||||||||||||||||||||||
VIEW |
2,357
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 36A DPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | - | N-Channel | - | 55V | 36A (Ta) | - | - | - | - | - | - | ||||
VIEW |
3,652
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 36A SOP8 ADV | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 45W (Tc) | N-Channel | - | 30V | 36A (Ta) | 5.6 mOhm @ 18A, 10V | 2.3V @ 1mA | 35nC @ 10V | 1970pF @ 10V | 4.5V, 10V | ±20V | ||||
VIEW |
3,487
In-stock
|
Diodes Incorporated | MOSFET P-CH 30V 36A 8SOIC | - | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | 2.18W (Ta) | P-Channel | - | 30V | 36A (Ta) | 7.5 mOhm @ 10A, 10V | 2.1V @ 250µA | 126.2nC @ 10V | 6234pF @ 15V | 4.5V, 10V | ±20V | ||||
VIEW |
2,531
In-stock
|
Diodes Incorporated | MOSFET P-CH 30V 36A 8SOIC | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | 2.18W (Ta) | P-Channel | - | 30V | 36A (Ta) | 7.5 mOhm @ 10A, 10V | 2.1V @ 250µA | 126.2nC @ 10V | 6234pF @ 15V | 4.5V, 10V | ±20V | ||||
VIEW |
3,601
In-stock
|
Diodes Incorporated | MOSFET P-CH 30V 36A 8SOIC | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | 2.18W (Ta) | P-Channel | - | 30V | 36A (Ta) | 7.5 mOhm @ 10A, 10V | 2.1V @ 250µA | 126.2nC @ 10V | 6234pF @ 15V | 4.5V, 10V | ±20V | ||||
VIEW |
2,943
In-stock
|
Diodes Incorporated | MOSFET P-CH 30V 36A 8SOIC | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | 2.18W (Ta) | P-Channel | - | 30V | 36A (Ta) | 7.5 mOhm @ 10A, 10V | 2.1V @ 250µA | 126.2nC @ 10V | 6234pF @ 15V | 4.5V, 10V | ±20V | ||||
VIEW |
3,164
In-stock
|
EPC | TRANS GAN 100V 36A BUMPED DIE | eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die Outline (11-Solder Bar) | - | N-Channel | - | 100V | 36A (Ta) | 7 mOhm @ 25A, 5V | 2.5V @ 5mA | 9nC @ 5V | 900pF @ 50V | 5V | +6V, -4V | ||||
VIEW |
902
In-stock
|
EPC | TRANS GAN 100V 36A BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die Outline (11-Solder Bar) | - | N-Channel | - | 100V | 36A (Ta) | 7 mOhm @ 25A, 5V | 2.5V @ 5mA | 9nC @ 5V | 900pF @ 50V | 5V | +6V, -4V | ||||
VIEW |
3,749
In-stock
|
EPC | TRANS GAN 100V 36A BUMPED DIE | eGaN® | Active | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die Outline (11-Solder Bar) | - | N-Channel | - | 100V | 36A (Ta) | 7 mOhm @ 25A, 5V | 2.5V @ 5mA | 9nC @ 5V | 900pF @ 50V | 5V | +6V, -4V |