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- Part Status :
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- Supplier Device Package :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
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10 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,826
In-stock
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ON Semiconductor | MOSFET P-CH 12V 3.5A 6-WDFN | µCool™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-WDFN (2x2) | 700mW (Ta) | P-Channel | 12V | 3.5A (Ta) | 40 mOhm @ 3A, 4.5V | 800mV @ 250µA | 15nC @ 4.5V | 1157pF @ 6V | 1.2V, 4.5V | ±8V | |||
|
VIEW |
1,147
In-stock
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Diodes Incorporated | MOSFET N CH 12V 11A U-DFN2020-6E | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type E) | 690mW (Ta) | N-Channel | 12V | 11A (Ta) | 10 mOhm @ 9.7A, 4.5V | 800mV @ 250µA | 50.6nC @ 8V | 2425pF @ 10V | 1.2V, 4.5V | ±8V | |||
|
VIEW |
3,009
In-stock
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Nexperia USA Inc. | MOSFET P-CH 12V 3.2A DFN1010D-3G | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-XDFN Exposed Pad | DFN1010D-3 | 317mW (Ta), 8.33W (Tc) | P-Channel | 12V | 3.2A (Ta) | 72 mOhm @ 3.2A, 4.5V | 1V @ 250µA | 12nC @ 4.5V | 634pF @ 6V | 1.2V, 4.5V | ±8V | |||
|
VIEW |
2,361
In-stock
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Vishay Siliconix | MOSFET N-CH 12V 500MA PWRPAK0806 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 0806 | PowerPAK® 0806 | 1.25W (Ta) | N-Channel | 12V | 500mA (Tc) | 340 mOhm @ 500mA, 4.5V | 900mV @ 250µA | 0.71nC @ 4.5V | 21pF @ 6V | 1.2V, 4.5V | ±5V | |||
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|
VIEW |
1,824
In-stock
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Toshiba Semiconductor and Storage | MOSFET P CH 12V 12A UDFN6B | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1.25W (Ta) | P-Channel | 12V | 12A (Ta) | 12 mOhm @ 4A, 4.5V | 1V @ 1mA | 37.6nC @ 4.5V | 2700pF @ 10V | 1.2V, 4.5V | ±6V | |||
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|
VIEW |
818
In-stock
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Diodes Incorporated | MOSFET P-CH 12V 9.1A 6UDFN | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type E) | 660mW (Ta) | P-Channel | 12V | 9.1A (Ta) | 16 mOhm @ 8.2A, 4.5V | 800mV @ 250µA | 42.6nC @ 5V | 2953pF @ 4V | 1.2V, 4.5V | ±8V | |||
|
VIEW |
3,200
In-stock
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Vishay Siliconix | MOSFET P-CH 12V SC-89 | TrenchFET® | Last Time Buy | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SC-89, SOT-490 | SC-89-3 | 190mW (Ta) | P-Channel | 12V | - | 640 mOhm @ 400mA, 4.5V | 800mV @ 250µA | 4nC @ 4.5V | 62pF @ 6V | 1.2V, 4.5V | ±5V | |||
|
VIEW |
3,761
In-stock
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Toshiba Semiconductor and Storage | X34 PB-F SMALL LOW ON RESISTANCE | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | P-Channel | 12V | 5.4A (Ta) | 17 mOhm @ 5A, 4.5V | 1V @ 1mA | 33nC @ 4.5V | 2700pF @ 10V | 1.2V, 4.5V | ±6V | |||
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|
VIEW |
618
In-stock
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Nexperia USA Inc. | MOSFET N-CH 12V 3.2A 3DFN | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-XDFN Exposed Pad | DFN1010D-3 | 400mW (Ta), 8.33W (Tc) | N-Channel | 12V | 3.2A (Ta) | 45 mOhm @ 3.2A, 4.5V | 900mV @ 250µA | 11.6nC @ 4.5V | 556pF @ 10V | 1.2V, 4.5V | ±8V | |||
|
VIEW |
3,133
In-stock
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Diodes Incorporated | MOSFET N-CH 12V 10.7A TSOT26 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSOT-26 | 1.73W (Ta) | N-Channel | 12V | 10.7A (Ta) | 10 mOhm @ 9.7A, 4.5V | 800mV @ 250µA | 50.4nC @ 8V | 2588pF @ 10V | 1.2V, 4.5V | ±8V | |||
