Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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AO4437L
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2,857
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Alpha & Omega Semiconductor Inc. MOSFET P-CH 8SOIC - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC 3W (Ta) P-Channel 12V 11A (Ta) 16 mOhm @ 11A, 4.5V 1V @ 250µA 47nC @ 4.5V 4750pF @ 6V 1.8V, 4.5V ±8V
AO4437
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Alpha & Omega Semiconductor Inc. MOSFET P-CH 12V 11A 8SOIC - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC 3W (Ta) P-Channel 12V 11A (Ta) 16 mOhm @ 11A, 4.5V 1V @ 250µA 47nC @ 4.5V 4750pF @ 6V 1.8V, 4.5V ±8V
SSM6J511NU,LF
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2,855
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Toshiba Semiconductor and Storage MOSFET P-CH 12V 14A UDFN6B U-MOSVII Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-UDFNB (2x2) 1.25W (Ta) P-Channel 12V 14A (Ta) 9.1 mOhm @ 4A, 8V 1V @ 1mA 47nC @ 4.5V 3350pF @ 6V 1.8V, 8V ±10V
SSM6J511NU,LF
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3,821
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Toshiba Semiconductor and Storage MOSFET P-CH 12V 14A UDFN6B U-MOSVII Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-UDFNB (2x2) 1.25W (Ta) P-Channel 12V 14A (Ta) 9.1 mOhm @ 4A, 8V 1V @ 1mA 47nC @ 4.5V 3350pF @ 6V 1.8V, 8V ±10V
SSM6J511NU,LF
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2,950
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Toshiba Semiconductor and Storage MOSFET P-CH 12V 14A UDFN6B U-MOSVII Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-UDFNB (2x2) - P-Channel 12V 14A (Ta) 9.1 mOhm @ 4A, 8V 1V @ 1mA 47nC @ 4.5V 3350pF @ 6V - -