- Manufacture :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | |||||||||||||||||||||||||
VIEW |
3,162
In-stock
|
Diodes Incorporated | MOSFET P-CH 12V 19A POWERDI3333 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerDI3333-8 | 2.16W | P-Channel | 12V | 19A (Tc) | 11.7 mOhm @ 12A, 4.5V | 1.2V @ 250µA | 9.5nC @ 6V | 913pF @ 6V | 2.5V, 4.5V | -6V | ||||
VIEW |
2,711
In-stock
|
Diodes Incorporated | MOSFET P-CH 12V 19A POWERDI3333 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerDI3333-8 | 2.16W | P-Channel | 12V | 19A (Tc) | 11.7 mOhm @ 12A, 4.5V | 1.2V @ 250µA | 9.5nC @ 6V | 913pF @ 6V | 2.5V, 4.5V | -6V | ||||
VIEW |
1,512
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 12V 6A SOP-8 ADV | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 20W (Tc) | P-Channel | 12V | 6A (Ta) | 33 mOhm @ 3A, 4.5V | 1.2V @ 200µA | 18nC @ 5V | 1600pF @ 10V | 1.8V, 4.5V | ±8V |