- Manufacture :
- Series :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,757
In-stock
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ON Semiconductor | MOSFET P-CH 20V 9.4A MICROFET | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-VDFN Exposed Pad | 6-MicroFET (2x2) | 2.4W (Ta) | P-Channel | 20V | 9.4A (Ta) | 20 mOhm @ 9.4A, 4.5V | 1.5V @ 250µA | 29nC @ 4.5V | 2805pF @ 10V | 1.8V, 4.5V | ±8V | |||
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VIEW |
1,531
In-stock
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Diodes Incorporated | MOSFET N-CH 20V 7.3A 8SO | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 1.56W (Ta) | N-Channel | 20V | 7.3A (Ta) | 20 mOhm @ 9.4A, 4.5V | 1.3V @ 250µA | 11.6nC @ 4.5V | 1000pF @ 10V | 1.5V, 4.5V | ±8V | |||
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VIEW |
1,885
In-stock
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Diodes Incorporated | MOSFET N-CH 20V 6.9A SC59 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SC-59-3 | 610mW (Ta) | N-Channel | 20V | 6.9A (Ta) | 20 mOhm @ 9.4A, 4.5V | 1.5V @ 250µA | 11.6nC @ 4.5V | 1149pF @ 10V | 2.5V, 4.5V | ±12V |