Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IPB60R250CPATMA1
RFQ
VIEW
RFQ
3,305
In-stock
Infineon Technologies MOSFET N-CH 650V 12A TO263-3 CoolMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 104W (Tc) N-Channel - 650V 12A (Tc) 250 mOhm @ 7.8A, 10V 3.5V @ 440µA 35nC @ 10V 1200pF @ 100V 10V ±20V
SIE836DF-T1-E3
RFQ
VIEW
RFQ
2,615
In-stock
Vishay Siliconix MOSFET N-CH 200V 18.3A POLARPAK TrenchFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 10-PolarPAK® (SH) 10-PolarPAK® (SH) 5.2W (Ta), 104W (Tc) N-Channel - 200V 18.3A (Tc) 130 mOhm @ 4.1A, 10V 4.5V @ 250µA 41nC @ 10V 1200pF @ 100V 10V ±30V
SIE836DF-T1-GE3
RFQ
VIEW
RFQ
1,650
In-stock
Vishay Siliconix MOSFET N-CH 200V 18.3A POLARPAK TrenchFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 10-PolarPAK® (SH) 10-PolarPAK® (SH) 5.2W (Ta), 104W (Tc) N-Channel - 200V 18.3A (Tc) 130 mOhm @ 4.1A, 10V 4.5V @ 250µA 41nC @ 10V 1200pF @ 100V 10V ±30V