- Manufacture :
- Series :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Drive Voltage (Max Rds On, Min Rds On) :
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5 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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,%20SC-63.jpg)
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VIEW |
1,087
In-stock
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Vishay Siliconix | MOSFET P-CH 40V 60A TO252 | TrenchFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 3W (Ta), 93.7W (Tc) | P-Channel | - | 40V | 60A (Tc) | 13 mOhm @ 30A, 10V | 3V @ 250µA | 95nC @ 10V | 3120pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
3,114
In-stock
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Vishay Siliconix | MOSFET P-CH 40V 60A DPAK | TrenchFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 3W (Ta), 93.7W (Tc) | P-Channel | - | 40V | 60A (Tc) | 13 mOhm @ 30A, 10V | 3V @ 250µA | 95nC @ 10V | 3120pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
1,724
In-stock
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NXP USA Inc. | MOSFET N-CH 75V 53A D2PAK | TrenchMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 138W (Tc) | N-Channel | - | 75V | 53A (Tc) | 22 mOhm @ 25A, 10V | 2V @ 1mA | - | 3120pF @ 25V | 4.5V, 10V | ±10V | |||
|
VIEW |
3,896
In-stock
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Infineon Technologies | MOSFET N-CH 40V 24A PQFN | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | PQFN (5x6) | 3.6W (Ta), 114W (Tc) | N-Channel | - | 40V | 24A (Ta), 100A (Tc) | 3.5 mOhm @ 50A, 10V | 4V @ 100µA | 80nC @ 10V | 3120pF @ 25V | 10V | ±20V | |||
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VIEW |
1,515
In-stock
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Infineon Technologies | MOSFET N-CH 40V 24A PQFN | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | PQFN (5x6) | 3.6W (Ta), 114W (Tc) | N-Channel | - | 40V | 24A (Ta), 100A (Tc) | 3.5 mOhm @ 50A, 10V | 4V @ 100µA | 80nC @ 10V | 3120pF @ 25V | 10V | ±20V | |||
