- Gate Charge (Qg) (Max) @ Vgs :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,767
In-stock
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Infineon Technologies | MOSFET N-CH 30V 31A DIRECTFET | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MX | DIRECTFET™ MX | 2.8W (Ta), 104W (Tc) | N-Channel | - | 30V | 31A (Ta), 190A (Tc) | 1.8 mOhm @ 31A, 10V | 2.35V @ 150µA | 63nC @ 4.5V | 6030pF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
2,179
In-stock
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Infineon Technologies | MOSFET N-CH 30V 31A DIRECTFET | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MX | DIRECTFET™ MX | 2.8W (Ta), 104W (Tc) | N-Channel | - | 30V | 31A (Ta), 190A (Tc) | 1.8 mOhm @ 31A, 10V | 2.35V @ 150µA | 63nC @ 4.5V | 6030pF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
2,196
In-stock
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Infineon Technologies | MOSFET N CH 30V 31A MX | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MX | DIRECTFET™ MX | 2.8W (Ta), 104W (Tc) | N-Channel | - | 30V | 31A (Ta), 190A (Tc) | 1.8 mOhm @ 31A, 10V | 2.35V @ 150µA | 53nC @ 4.5V | 6030pF @ 15V | 4.5V, 10V | ±20V | |||
