Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SSM3J108TU(TE85L)
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2,108
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Toshiba Semiconductor and Storage MOSFET P-CH 20V 1.8A UFM U-MOSIII Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 3-SMD, Flat Leads UFM 500mW (Ta) P-Channel 20V 1.8A (Ta) 158 mOhm @ 800mA, 4V 1V @ 1mA - 250pF @ 10V 1.8V, 4V ±8V
SSM3K106TU(TE85L)
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3,291
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Toshiba Semiconductor and Storage MOSFET N-CH 20V 1.2A UFM π-MOSVI Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 3-SMD, Flat Leads UFM 500mW (Ta) N-Channel 20V 1.2A (Ta) 310 mOhm @ 600mA, 10V 2.3V @ 100µA - 36pF @ 10V 4V, 10V ±20V
SSM3J129TU(TE85L)
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2,679
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Toshiba Semiconductor and Storage MOSFET P-CH 20V 4.6A UFM U-MOSV Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 3-SMD, Flat Leads UFM 500mW (Ta) P-Channel 20V 4.6A (Ta) 46 mOhm @ 3A, 4.5V 1V @ 1mA 8.1nC @ 4.5V 640pF @ 10V 1.5V, 4.5V ±8V
SSM3J114TU(TE85L)
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3,119
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Toshiba Semiconductor and Storage MOSFET P-CH 20V 1.8A UFM - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 3-SMD, Flat Leads UFM 500mW (Ta) P-Channel 20V 1.8A (Ta) 149 mOhm @ 600mA, 4V 1V @ 1mA 7.7nC @ 4V 331pF @ 10V 1.5V, 4V ±8V
SSM3J114TU(T5L,T)
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2,731
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Toshiba Semiconductor and Storage MOSFET P-CH 20V 1.8A UFM - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 3-SMD, Flat Leads UFM 500mW (Ta) P-Channel 20V 1.8A (Ta) 149 mOhm @ 600mA, 4V 1V @ 1mA 7.7nC @ 4V 331pF @ 10V 1.5V, 4V ±8V