- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Applied Filters :
3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
826
In-stock
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Vishay Siliconix | MOSFET N-CH 250V 4.4A D2PAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.1W (Ta), 50W (Tc) | N-Channel | 250V | 4.4A (Tc) | 1.1 Ohm @ 2.6A, 10V | 4V @ 250µA | 14nC @ 10V | 260pF @ 25V | 10V | ±20V | |||
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VIEW |
3,340
In-stock
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Vishay Siliconix | MOSFET N-CH 250V 3.8A DPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 42W (Tc) | N-Channel | 250V | 3.8A (Tc) | 1.1 Ohm @ 2.3A, 10V | 4V @ 250µA | 14nC @ 10V | 260pF @ 25V | 10V | ±20V | |||
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VIEW |
3,381
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 5.2A D2PAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3W (Ta), 50W (Tc) | N-Channel | 200V | 5.2A (Tc) | 800 mOhm @ 3.1A, 10V | 4V @ 250µA | 14nC @ 10V | 260pF @ 25V | 10V | ±20V | |||
