Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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AUIRLL024N
RFQ
VIEW
RFQ
3,012
In-stock
Infineon Technologies MOSFET N-CH 55V 3.1A SOT-223 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 1W (Ta) N-Channel - 55V 3.1A (Ta) 65 mOhm @ 3.1A, 10V 2V @ 250µA 15.6nC @ 5V 510pF @ 25V 4V, 10V ±16V
IRLML5203
RFQ
VIEW
RFQ
720
In-stock
Infineon Technologies MOSFET P-CH 30V 3A SOT-23 HEXFET® Obsolete Tube MOSFET (Metal Oxide) - Surface Mount TO-236-3, SC-59, SOT-23-3 Micro3™/SOT-23 1.25W (Ta) P-Channel - 30V 3A (Ta) 98 mOhm @ 3A, 10V 2.5V @ 250µA 14nC @ 10V 510pF @ 25V 4.5V, 10V ±20V
IRF7421D1
RFQ
VIEW
RFQ
3,212
In-stock
Infineon Technologies MOSFET N-CH 30V 5.8A 8-SOIC FETKY™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2W (Ta) N-Channel Schottky Diode (Isolated) 30V 5.8A (Ta) 35 mOhm @ 4.1A, 10V 1V @ 250µA 27nC @ 10V 510pF @ 25V 4.5V, 10V ±20V
IRFBC30AS
RFQ
VIEW
RFQ
1,280
In-stock
Vishay Siliconix MOSFET N-CH 600V 3.6A D2PAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 74W (Tc) N-Channel - 600V 3.6A (Tc) 2.2 Ohm @ 2.2A, 10V 4.5V @ 250µA 23nC @ 10V 510pF @ 25V 10V ±30V