Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRFR9014N
RFQ
VIEW
RFQ
1,972
In-stock
Infineon Technologies MOSFET P-CH 60V 5.1A DPAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) - Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 2.5W (Ta), 25W (Tc) P-Channel 60V 5.1A (Tc) 500 mOhm @ 3.1A, 10V 4V @ 250µA 12nC @ 10V 270pF @ 25V 10V ±20V
IRFR9310
RFQ
VIEW
RFQ
1,439
In-stock
Vishay Siliconix MOSFET P-CH 400V 1.8A DPAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 50W (Tc) P-Channel 400V 1.8A (Tc) 7 Ohm @ 1.1A, 10V 4V @ 250µA 13nC @ 10V 270pF @ 25V 10V ±20V
IRFR9014
RFQ
VIEW
RFQ
2,229
In-stock
Vishay Siliconix MOSFET P-CH 60V 5.1A DPAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 2.5W (Ta), 25W (Tc) P-Channel 60V 5.1A (Tc) 500 mOhm @ 3.1A, 10V 4V @ 250µA 12nC @ 10V 270pF @ 25V 10V ±20V
IRFL9014
RFQ
VIEW
RFQ
905
In-stock
Vishay Siliconix MOSFET P-CH 60V 1.8A SOT223 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 2W (Ta), 3.1W (Tc) P-Channel 60V 1.8A (Tc) 500 mOhm @ 1.1A, 10V 4V @ 250µA 12nC @ 10V 270pF @ 25V 10V ±20V
IRF9Z14S
RFQ
VIEW
RFQ
2,282
In-stock
Vishay Siliconix MOSFET P-CH 60V 6.7A D2PAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.7W (Ta), 43W (Tc) P-Channel 60V 6.7A (Tc) 500 mOhm @ 4A, 10V 4V @ 250µA 12nC @ 10V 270pF @ 25V 10V ±20V