Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRFL024Z
RFQ
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RFQ
779
In-stock
Infineon Technologies MOSFET N-CH 55V 5.1A SOT223 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 1W (Ta) N-Channel 55V 5.1A (Ta) 57.5 mOhm @ 3.1A, 10V 4V @ 250µA 14nC @ 10V 340pF @ 25V 10V ±20V
IRF820AS
RFQ
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RFQ
3,143
In-stock
Vishay Siliconix MOSFET N-CH 500V 2.5A D2PAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 50W (Tc) N-Channel 500V 2.5A (Tc) 3 Ohm @ 1.5A, 10V 4.5V @ 250µA 17nC @ 10V 340pF @ 25V 10V ±30V
IRFR9220
RFQ
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RFQ
1,557
In-stock
Vishay Siliconix MOSFET P-CH 200V 3.6A DPAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 2.5W (Ta), 42W (Tc) P-Channel 200V 3.6A (Tc) 1.5 Ohm @ 2.2A, 10V 4V @ 250µA 20nC @ 10V 340pF @ 25V 10V ±20V