- Series :
- Power Dissipation (Max) :
- FET Type :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Drive Voltage (Max Rds On, Min Rds On) :
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6 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,446
In-stock
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Infineon Technologies | MOSFET N-CH 30V 6.5A 8-SOIC | FETKY™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2W (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 6.5A (Ta) | 29 mOhm @ 5.8A, 10V | 1V @ 250µA | 33nC @ 10V | 650pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
2,522
In-stock
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Infineon Technologies | MOSFET N-CH 30V 6.5A 8-SOIC | FETKY™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2W (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 6.5A (Ta) | 32 mOhm @ 5.8A, 10V | 1V @ 250µA | 33nC @ 10V | 650pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,051
In-stock
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Infineon Technologies | MOSFET N-CH 30V 6.5A 8-SOIC | FETKY™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2W (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 6.5A (Ta) | 29 mOhm @ 5.8A, 10V | 1V @ 250µA | 33nC @ 10V | 650pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
2,023
In-stock
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Infineon Technologies | MOSFET P-CH 55V 18A DPAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 57W (Tc) | P-Channel | - | 55V | 18A (Tc) | 110 mOhm @ 9.6A, 10V | 4V @ 250µA | 32nC @ 10V | 650pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,179
In-stock
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Infineon Technologies | MOSFET P-CH 55V 18A DPAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 57W (Tc) | P-Channel | - | 55V | 18A (Tc) | 110 mOhm @ 9.6A, 10V | 4V @ 250µA | 32nC @ 10V | 650pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,750
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 6.5A 8-SOIC | FETKY™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2W (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 6.5A (Ta) | 32 mOhm @ 5.8A, 10V | 1V @ 250µA | 33nC @ 10V | 650pF @ 25V | 4.5V, 10V | ±20V |