Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRF1010EZS
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1,486
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Infineon Technologies MOSFET N-CH 60V 75A D2PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 140W (Tc) N-Channel - 60V 75A (Tc) 8.5 mOhm @ 51A, 10V 4V @ 100µA 86nC @ 10V 2810pF @ 25V 10V ±20V
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RFQ
3,264
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IXYS MOSFET N-CH 800V 20A PLUS220SMD HiPerFET™, PolarHT™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PLUS-220SMD PLUS-220SMD 500W (Tc) N-Channel - 800V 20A (Tc) 520 mOhm @ 10A, 10V 5V @ 4mA 86nC @ 10V 4685pF @ 25V 10V ±30V
HUFA76639S3S
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2,165
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ON Semiconductor MOSFET N-CH 100V 50A D2PAK UltraFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 180W (Tc) N-Channel - 100V 51A (Tc) 26 mOhm @ 51A, 10V 3V @ 250µA 86nC @ 10V 2400pF @ 25V 4.5V, 10V ±16V
HUF76639S3S
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RFQ
1,644
In-stock
ON Semiconductor MOSFET N-CH 100V 50A D2PAK UltraFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 180W (Tc) N-Channel - 100V 51A (Tc) 26 mOhm @ 51A, 10V 3V @ 250µA 86nC @ 10V 2400pF @ 25V 4.5V, 10V ±16V
IRFS23N20D
RFQ
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RFQ
670
In-stock
Infineon Technologies MOSFET N-CH 200V 24A D2PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.8W (Ta), 170W (Tc) N-Channel - 200V 24A (Tc) 100 mOhm @ 14A, 10V 5.5V @ 250µA 86nC @ 10V 1960pF @ 25V 10V ±30V