Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Infineon Technologies MOSFET N-CH 150V 3.6A 8-SOIC HEXFET® Obsolete Tube MOSFET (Metal Oxide) - Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 150V 3.6A (Ta) 90 mOhm @ 2.2A, 10V 5.5V @ 250µA 41nC @ 10V 990pF @ 25V 10V ±30V
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825
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Vishay Siliconix MOSFET N-CH 250V 8.1A D2PAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.1W (Ta), 74W (Tc) N-Channel - 250V 8.1A (Tc) 450 mOhm @ 5.1A, 10V 4V @ 250µA 41nC @ 10V 770pF @ 25V 10V ±20V
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2,493
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Infineon Technologies MOSFET N-CH 80V 10A 8-SOIC HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 80V 10A (Ta) 13.4 mOhm @ 10A, 10V 4.9V @ 100µA 41nC @ 10V 1620pF @ 25V 10V ±20V
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3,402
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Vishay Siliconix MOSFET N-CH 250V 8.1A D2PAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.1W (Ta), 74W (Tc) N-Channel - 250V 8.1A (Tc) 450 mOhm @ 5.1A, 10V 4V @ 250µA 41nC @ 10V 770pF @ 25V 10V ±20V
IRF7451
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2,287
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Infineon Technologies MOSFET N-CH 150V 3.6A 8-SOIC HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 150V 3.6A (Ta) 90 mOhm @ 2.2A, 10V 5.5V @ 250µA 41nC @ 10V 990pF @ 25V 10V ±30V