- Manufacture :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
3,974
In-stock
|
Vishay Siliconix | MOSFET N-CH 400V 10A D2PAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | - | N-Channel | - | 400V | 10A (Tc) | 550 mOhm @ 6A, 10V | 4V @ 250µA | 39nC @ 10V | 1100pF @ 25V | 10V | ±30V | |||
|
|
VIEW |
1,369
In-stock
|
Vishay Siliconix | MOSFET N-CH 500V 8A D2PAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.1W (Ta), 125W (Tc) | N-Channel | - | 500V | 8A (Tc) | 850 mOhm @ 4.8A, 10V | 4V @ 250µA | 39nC @ 10V | 1100pF @ 25V | 10V | ±30V | |||
|
VIEW |
3,607
In-stock
|
Infineon Technologies | MOSFET N-CH 200V 2.5A 8-SOIC | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 200V | 2.5A (Ta) | 170 mOhm @ 1.5A, 10V | 5.5V @ 250µA | 39nC @ 10V | 940pF @ 25V | 10V | ±30V | |||
