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- Series :
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- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
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7 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,592
In-stock
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Infineon Technologies | MOSFET P-CH 30V 2A MICRO8 | FETKY™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Micro8™ | 1.25W (Ta) | P-Channel | Schottky Diode (Isolated) | 30V | 2A (Ta) | 200 mOhm @ 1.2A, 10V | 1V @ 250µA | 11nC @ 10V | 180pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
2,203
In-stock
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Infineon Technologies | MOSFET N-CH 55V 1.5A SOT-223 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 1.5A (Ta) | 160 mOhm @ 1.9A, 10V | 4V @ 250µA | 11nC @ 10V | 190pF @ 25V | 10V | ±20V | |||
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VIEW |
1,851
In-stock
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Infineon Technologies | MOSFET P-CH 30V 2A MICRO8 | FETKY™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Micro8™ | 1.25W (Ta) | P-Channel | Schottky Diode (Isolated) | 30V | 2A (Ta) | 200 mOhm @ 1.2A, 10V | 1V @ 250µA | 11nC @ 10V | 180pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
723
In-stock
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Vishay Siliconix | MOSFET N-CH 60V 10A D2PAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.7W (Ta), 43W (Tc) | N-Channel | - | 60V | 10A (Tc) | 200 mOhm @ 6A, 10V | 4V @ 250µA | 11nC @ 10V | 300pF @ 25V | 10V | ±20V | |||
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VIEW |
1,116
In-stock
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Vishay Siliconix | MOSFET N-CH 60V 7.7A DPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 25W (Tc) | N-Channel | - | 60V | 7.7A (Tc) | 200 mOhm @ 4.6A, 10V | 4V @ 250µA | 11nC @ 10V | 300pF @ 25V | 10V | ±20V | |||
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VIEW |
3,709
In-stock
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Vishay Siliconix | MOSFET N-CH 60V 2.7A SOT223 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2W (Ta), 3.1W (Tc) | N-Channel | - | 60V | 2.7A (Tc) | 200 mOhm @ 1.6A, 10V | 4V @ 250µA | 11nC @ 10V | 300pF @ 25V | 10V | ±20V | |||
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VIEW |
3,826
In-stock
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Vishay Siliconix | MOSFET P-CH 200V 1.8A D2PAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3W (Ta), 20W (Tc) | P-Channel | - | 200V | 1.8A (Tc) | 3 Ohm @ 900mA, 10V | 4V @ 250µA | 11nC @ 10V | 170pF @ 25V | 10V | ±20V |