- Manufacture :
- Series :
- Operating Temperature :
- Power Dissipation (Max) :
- FET Type :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
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9 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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,%20SC-63.jpg)
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VIEW |
1,338
In-stock
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Vishay Siliconix | MOSFET N-CH 60V 14A DPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 42W (Tc) | N-Channel | - | 60V | 14A (Tc) | 100 mOhm @ 8.4A, 10V | 4V @ 250µA | 25nC @ 10V | 640pF @ 25V | 10V | ±20V | |||
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VIEW |
1,376
In-stock
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Infineon Technologies | MOSFET P-CH 30V 3.6A 8-SOIC | FETKY™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2W (Ta) | P-Channel | Schottky Diode (Isolated) | 30V | 3.6A (Ta) | 100 mOhm @ 1.8A, 10V | 1V @ 250µA | 25nC @ 10V | 440pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
1,874
In-stock
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Infineon Technologies | MOSFET P-CH 20V 5.3A 8-SOIC | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Tc) | P-Channel | - | 20V | 5.3A (Ta) | 60 mOhm @ 5.3A, 10V | 2.5V @ 250µA | 25nC @ 10V | 860pF @ 10V | 4.5V, 10V | ±12V | |||
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VIEW |
1,798
In-stock
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Vishay Siliconix | MOSFET N-CH 60V 17A D2PAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.7W (Ta), 60W (Tc) | N-Channel | - | 60V | 17A (Tc) | 100 mOhm @ 10A, 10V | 4V @ 250µA | 25nC @ 10V | 640pF @ 25V | 10V | ±20V | |||
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VIEW |
884
In-stock
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Infineon Technologies | MOSFET N-CH 100V 9.4A DPAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 48W (Tc) | N-Channel | - | 100V | 9.4A (Ta) | 210 mOhm @ 5.6A, 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | 10V | ±20V | |||
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VIEW |
2,174
In-stock
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Infineon Technologies | MOSFET P-CH 30V 3.6A 8-SOIC | FETKY™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2W (Ta) | P-Channel | Schottky Diode (Isolated) | 30V | 3.6A (Ta) | 100 mOhm @ 1.8A, 10V | 1V @ 250µA | 25nC @ 10V | 440pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
1,697
In-stock
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Vishay Siliconix | MOSFET N-CH 60V 14A DPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 42W (Tc) | N-Channel | - | 60V | 14A (Tc) | 100 mOhm @ 8.4A, 10V | 4V @ 250µA | 25nC @ 10V | 640pF @ 25V | 10V | ±20V | |||
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|
VIEW |
1,852
In-stock
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Vishay Siliconix | MOSFET N-CH 60V 14A DPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 42W (Tc) | N-Channel | - | 60V | 14A (Tc) | 100 mOhm @ 8.4A, 10V | 4V @ 250µA | 25nC @ 10V | 640pF @ 25V | 10V | ±20V | |||
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VIEW |
628
In-stock
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Infineon Technologies | MOSFET N-CH 100V 9.7A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 48W (Tc) | N-Channel | - | 100V | 9.7A (Tc) | 200 mOhm @ 5.7A, 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | 10V | ±20V | |||
