Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTA180N055T
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RFQ
2,119
In-stock
IXYS MOSFET N-CH 55V 180A TO-263 - Obsolete Tube MOSFET (Metal Oxide) - Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (IXTA) - N-Channel - 55V 180A (Tc) - 4V @ 1mA - - - -
IXTA160N085T
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RFQ
2,976
In-stock
IXYS MOSFET N-CH 85V 160A TO-263 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (IXTA) 360W (Tc) N-Channel - 85V 160A (Tc) 6 mOhm @ 50A, 10V 4V @ 1mA 164nC @ 10V 6400pF @ 25V 10V ±20V
APT30M70SVRG
RFQ
VIEW
RFQ
983
In-stock
Microsemi Corporation MOSFET N-CH 300V 48A D3PAK POWER MOS V® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA D3 [S] 370W (Tc) N-Channel - 300V 48A (Tc) 70 mOhm @ 500mA, 10V 4V @ 1mA 225nC @ 10V 5870pF @ 25V 10V ±30V
BUZ32H3045AATMA1
RFQ
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RFQ
3,610
In-stock
Infineon Technologies MOSFET N-CH 200V 9.5A TO-263 SIPMOS® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3 75W (Tc) N-Channel - 200V 9.5A (Tc) 400 mOhm @ 6A, 10V 4V @ 1mA - 530pF @ 25V 10V ±20V
APT20M38SVFRG
RFQ
VIEW
RFQ
615
In-stock
Microsemi Corporation MOSFET N-CH 200V 67A D3PAK POWER MOS V® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA D3 [S] 370W (Tc) N-Channel - 200V 67A (Tc) 38 mOhm @ 500mA, 10V 4V @ 1mA 225nC @ 10V 6120pF @ 25V 10V ±30V