- Manufacture :
- Series :
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- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,860
In-stock
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Infineon Technologies | MOSFET N-CH 20V 67A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 57W (Tc) | N-Channel | - | 20V | 67A (Tc) | 7.9 mOhm @ 21A, 10V | 2.55V @ 250µA | 13nC @ 4.5V | 1220pF @ 10V | 4.5V, 10V | ±20V | |||
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VIEW |
615
In-stock
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Microsemi Corporation | MOSFET N-CH 200V 67A D3PAK | POWER MOS V® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3 [S] | 370W (Tc) | N-Channel | - | 200V | 67A (Tc) | 38 mOhm @ 500mA, 10V | 4V @ 1mA | 225nC @ 10V | 6120pF @ 25V | 10V | ±30V | |||
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VIEW |
675
In-stock
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Infineon Technologies | MOSFET N-CH 20V 67A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 57W (Tc) | N-Channel | - | 20V | 67A (Tc) | 7.9 mOhm @ 21A, 10V | 2.55V @ 250µA | 13nC @ 4.5V | 1220pF @ 10V | 4.5V, 10V | ±20V | |||
