Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTA180N085T7
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1,519
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IXYS MOSFET N-CH 85V 180A TO-263-7 TrenchMV™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-7, D²Pak (6 Leads + Tab), TO-263CB TO-263-7 (IXTA..7) 430W (Tc) N-Channel - 85V 180A (Tc) 5.5 mOhm @ 25A, 10V 4V @ 250µA 170nC @ 10V 7500pF @ 25V 10V ±20V
IXTA180N085T
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RFQ
1,271
In-stock
IXYS MOSFET N-CH 85V 180A TO-263 TrenchMV™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (IXTA) 430W (Tc) N-Channel - 85V 180A (Tc) 5.5 mOhm @ 25A, 10V 4V @ 250µA 170nC @ 10V 7500pF @ 25V 10V ±20V
IXTA180N055T
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RFQ
2,119
In-stock
IXYS MOSFET N-CH 55V 180A TO-263 - Obsolete Tube MOSFET (Metal Oxide) - Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (IXTA) - N-Channel - 55V 180A (Tc) - 4V @ 1mA - - - -
IRL3716SPBF
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RFQ
2,051
In-stock
Infineon Technologies MOSFET N-CH 20V 180A D2PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 210W (Tc) N-Channel - 20V 180A (Tc) 4 mOhm @ 90A, 10V 3V @ 250µA 79nC @ 4.5V 5090pF @ 10V 4.5V, 10V ±20V
IRL3716S
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RFQ
2,371
In-stock
Infineon Technologies MOSFET N-CH 20V 180A D2PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 210W (Tc) N-Channel - 20V 180A (Tc) 4 mOhm @ 90A, 10V 3V @ 250µA 79nC @ 4.5V 5090pF @ 10V 4.5V, 10V ±20V