Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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NTD14N03RG
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2,755
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ON Semiconductor MOSFET N-CH 25V 2.5A DPAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 1.04W (Ta), 20.8W (Tc) N-Channel - 25V 2.5A (Ta) 95 mOhm @ 5A, 10V 2V @ 250µA 1.8nC @ 5V 115pF @ 20V 4.5V, 10V ±20V
NTD14N03R
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RFQ
1,981
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ON Semiconductor MOSFET N-CH 25V 2.5A DPAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 1.04W (Ta), 20.8W (Tc) N-Channel - 25V 2.5A (Ta) 95 mOhm @ 5A, 10V 2V @ 250µA 1.8nC @ 5V 115pF @ 20V 4.5V, 10V ±20V
IRF7450
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RFQ
3,607
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Infineon Technologies MOSFET N-CH 200V 2.5A 8-SOIC HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 200V 2.5A (Ta) 170 mOhm @ 1.5A, 10V 5.5V @ 250µA 39nC @ 10V 940pF @ 25V 10V ±30V
IRF5804
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RFQ
2,562
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Infineon Technologies MOSFET P-CH 40V 2.5A 6-TSOP HEXFET® Obsolete Tube MOSFET (Metal Oxide) - Surface Mount SOT-23-6 Thin, TSOT-23-6 Micro6™(TSOP-6) 2W (Ta) P-Channel - 40V 2.5A (Ta) 198 mOhm @ 2.5A, 10V 3V @ 250µA 21nC @ 10V 680pF @ 25V 4.5V, 10V ±20V