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- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,823
In-stock
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IXYS | MOSFET N-CH 75V 55A TO-252 | TrenchMV™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 130W (Tc) | N-Channel | - | 75V | 55A (Tc) | 19.5 mOhm @ 27.5A, 10V | 4V @ 25µA | 33nC @ 10V | 1400pF @ 25V | 10V | ±20V | |||
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VIEW |
2,345
In-stock
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Infineon Technologies | MOSFET N-CH 30V 55A DPAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 107W (Tc) | N-Channel | - | 30V | 55A (Tc) | 19 mOhm @ 33A, 10V | 1V @ 250µA | 50nC @ 4.5V | 1600pF @ 25V | 4.5V, 10V | ±16V | |||
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VIEW |
2,969
In-stock
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Infineon Technologies | MOSFET N-CH 60V 55A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 115W (Tc) | N-Channel | - | 60V | 55A (Tc) | 16.5 mOhm @ 31A, 10V | 4V @ 250µA | 67nC @ 10V | 1812pF @ 25V | 10V | ±20V | |||
