Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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3,854
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GeneSiC Semiconductor TRANS SJT 650V 4A TO276 - Obsolete Tube SiC (Silicon Carbide Junction Transistor) -55°C ~ 225°C (TJ) Surface Mount TO-276AA TO-276 125W (Tc) - 650V 4A (Tc) (165°C) 415 mOhm @ 4A - - 324pF @ 35V - -
IRFBF30S
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2,852
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Vishay Siliconix MOSFET N-CH 900V 3.6A D2PAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 125W (Tc) N-Channel 900V 3.6A (Tc) 3.7 Ohm @ 2.2A, 10V 4V @ 250µA 78nC @ 10V 1200pF @ 25V 10V ±20V
IRFBE30S
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1,582
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Vishay Siliconix MOSFET N-CH 800V 4.1A D2PAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 125W (Tc) N-Channel 800V 4.1A (Tc) 3 Ohm @ 2.5A, 10V 4V @ 250µA 78nC @ 10V 1300pF @ 25V 10V ±20V
IRFBF30SPBF
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965
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Vishay Siliconix MOSFET N-CH 900V 3.6A D2PAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 125W (Tc) N-Channel 900V 3.6A (Tc) 3.7 Ohm @ 2.2A, 10V 4V @ 250µA 78nC @ 10V 1200pF @ 25V 10V ±20V
IRFBC40AS
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1,507
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Vishay Siliconix MOSFET N-CH 600V 6.2A D2PAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 125W (Tc) N-Channel 600V 6.2A (Tc) 1.2 Ohm @ 3.7A, 10V 4V @ 250µA 42nC @ 10V 1036pF @ 25V 10V ±30V