Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRFS5615PBF
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1,459
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Infineon Technologies MOSFET N-CH 150V 33A D2PAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 144W (Tc) N-Channel - 150V 33A (Tc) 42 mOhm @ 21A, 10V 5V @ 100µA 40nC @ 10V 1750pF @ 50V 10V ±20V
IRFS5620PBF
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620
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Infineon Technologies MOSFET N-CH 200V 24A D2PAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 144W (Tc) N-Channel - 200V 24A (Tc) 77.5 mOhm @ 15A, 10V 5V @ 100µA 38nC @ 10V 1710pF @ 50V 10V ±20V
IRFR12N25DCPBF
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1,061
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Infineon Technologies MOSFET N-CH 250V 14A DPAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 144W (Tc) N-Channel - 250V 14A (Tc) 260 mOhm @ 8.4A, 10V 5V @ 250µA 35nC @ 10V 810pF @ 25V 10V ±30V
IRFR12N25DPBF
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RFQ
2,238
In-stock
Infineon Technologies MOSFET N-CH 250V 14A DPAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 144W (Tc) N-Channel - 250V 14A (Tc) 260 mOhm @ 8.4A, 10V 5V @ 250µA 35nC @ 10V 810pF @ 25V 10V ±30V
IRFR12N25D
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RFQ
717
In-stock
Infineon Technologies MOSFET N-CH 250V 14A DPAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 144W (Tc) N-Channel - 250V 14A (Tc) 260 mOhm @ 8.4A, 10V 5V @ 250µA 35nC @ 10V 810pF @ 25V 10V ±30V