- Packaging :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
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6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
812
In-stock
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Infineon Technologies | MOSFET N-CH 100V 8.3A DIRECTFET | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | DIRECTFET™ MZ | 2.8W (Ta), 89W (Tc) | N-Channel | - | 100V | 8.3A (Ta), 47A (Tc) | 22 mOhm @ 8.2A, 10V | 4.9V @ 100µA | 31nC @ 10V | 1360pF @ 25V | 10V | ±20V | |||
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VIEW |
3,751
In-stock
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Infineon Technologies | MOSFET N-CH 100V 8.3A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | DIRECTFET™ MZ | 2.8W (Ta), 89W (Tc) | N-Channel | - | 100V | 8.3A (Ta), 47A (Tc) | 22 mOhm @ 8.2A, 10V | 4.9V @ 100µA | 31nC @ 10V | 1360pF @ 25V | 10V | ±20V | |||
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VIEW |
3,830
In-stock
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Infineon Technologies | MOSFET N-CH 100V 8.3A DIRECTFET | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | DIRECTFET™ MZ | 2.8W (Ta), 89W (Tc) | N-Channel | - | 100V | 8.3A (Ta), 47A (Tc) | 22 mOhm @ 8.2A, 10V | 4.9V @ 100µA | 31nC @ 10V | 1360pF @ 25V | 10V | ±20V | |||
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VIEW |
2,443
In-stock
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Infineon Technologies | MOSFET N-CH 60V 48A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 110W (Tc) | N-Channel | - | 60V | 48A (Tc) | 23 mOhm @ 29A, 10V | 4V @ 250µA | 60nC @ 10V | 1360pF @ 25V | 10V | ±20V | |||
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VIEW |
862
In-stock
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Infineon Technologies | MOSFET N-CH 60V 48A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 110W (Tc) | N-Channel | - | 60V | 48A (Tc) | 23 mOhm @ 29A, 10V | 4V @ 250µA | 60nC @ 10V | 1360pF @ 25V | 10V | ±20V | |||
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VIEW |
3,062
In-stock
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Infineon Technologies | MOSFET N-CH 60V 48A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 110W (Tc) | N-Channel | - | 60V | 48A (Tc) | 23 mOhm @ 29A, 10V | 4V @ 250µA | 60nC @ 10V | 1360pF @ 25V | 10V | ±20V | |||
