Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
Default Photo
RFQ
VIEW
RFQ
941
In-stock
Infineon Technologies MOSFET N-CH 100V 1.2A SOT223-4 Automotive, AEC-Q101, OptiMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 100V 1.2A (Ta) 600 mOhm @ 1.2A, 10V 1.8V @ 100µA 6.7nC @ 10V 152.7pF @ 25V 4.5V, 10V ±20V
IPD60R2K0C6BTMA1
RFQ
VIEW
RFQ
931
In-stock
Infineon Technologies MOSFET N-CH 600V 2.4A TO252-3 CoolMOS™ Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 22.3W (Tc) N-Channel - 600V 2.4A (Tc) 2 Ohm @ 760mA, 10V 3.5V @ 60µA 6.7nC @ 10V 140pF @ 100V 10V ±20V
IPD60R2K0C6BTMA1
RFQ
VIEW
RFQ
2,525
In-stock
Infineon Technologies MOSFET N-CH 600V 2.4A TO252-3 CoolMOS™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 22.3W (Tc) N-Channel - 600V 2.4A (Tc) 2 Ohm @ 760mA, 10V 3.5V @ 60µA 6.7nC @ 10V 140pF @ 100V 10V ±20V
IPD60R2K0C6BTMA1
RFQ
VIEW
RFQ
1,108
In-stock
Infineon Technologies MOSFET N-CH 600V 2.4A TO252-3 CoolMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 22.3W (Tc) N-Channel - 600V 2.4A (Tc) 2 Ohm @ 760mA, 10V 3.5V @ 60µA 6.7nC @ 10V 140pF @ 100V 10V ±20V