Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Toshiba Semiconductor and Storage MOSFET N-CH 100V 2.2A PS-8 U-MOSIII-H Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-SMD, Flat Lead PS-8 (2.9x2.4) 840mW (Ta) N-Channel 100V 2.2A (Ta) 180 mOhm @ 1.1A, 10V 2.3V @ 1mA 7.5nC @ 10V 360pF @ 10V 4.5V, 10V ±20V
IXCY01N90E
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IXYS MOSFET N-CH 900V 0.25A TO-252 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252 40W (Tc) N-Channel 900V 250mA (Tc) 80 Ohm @ 50mA, 10V 5V @ 25µA 7.5nC @ 10V 133pF @ 25V 10V ±20V