Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRFR9014N
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1,972
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Infineon Technologies MOSFET P-CH 60V 5.1A DPAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) - Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 2.5W (Ta), 25W (Tc) P-Channel 60V 5.1A (Tc) 500 mOhm @ 3.1A, 10V 4V @ 250µA 12nC @ 10V 270pF @ 25V 10V ±20V
IRFR9014TRL
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RFQ
1,673
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Vishay Siliconix MOSFET P-CH 60V 5.1A DPAK - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 2.5W (Ta), 25W (Tc) P-Channel 60V 5.1A (Tc) 500 mOhm @ 3.1A, 10V 4V @ 250µA 12nC @ 10V 270pF @ 25V 10V ±20V
IRFR9014TR
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RFQ
3,535
In-stock
Vishay Siliconix MOSFET P-CH 60V 5.1A DPAK - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 2.5W (Ta), 25W (Tc) P-Channel 60V 5.1A (Tc) 500 mOhm @ 3.1A, 10V 4V @ 250µA 12nC @ 10V 270pF @ 25V 10V ±20V
IRFR9014
RFQ
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RFQ
2,229
In-stock
Vishay Siliconix MOSFET P-CH 60V 5.1A DPAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 2.5W (Ta), 25W (Tc) P-Channel 60V 5.1A (Tc) 500 mOhm @ 3.1A, 10V 4V @ 250µA 12nC @ 10V 270pF @ 25V 10V ±20V