Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRFBE30S
RFQ
VIEW
RFQ
1,582
In-stock
Vishay Siliconix MOSFET N-CH 800V 4.1A D2PAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 125W (Tc) N-Channel - 800V 4.1A (Tc) 3 Ohm @ 2.5A, 10V 4V @ 250µA 78nC @ 10V 1300pF @ 25V 10V ±20V
IRFBE20S
RFQ
VIEW
RFQ
3,240
In-stock
Vishay Siliconix MOSFET N-CH 800V 1.8A D2PAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK - N-Channel - 800V 1.8A (Tc) 6.5 Ohm @ 1.1A, 10V 4V @ 250µA 38nC @ 10V 530pF @ 25V 10V ±20V
IXFT17N80Q
RFQ
VIEW
RFQ
1,250
In-stock
IXYS MOSFET N-CH 800V 17A TO-268(D3) HiPerFET™ Obsolete Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268 400W (Tc) N-Channel - 800V 17A (Tc) 600 mOhm @ 500mA, 10V 4.5V @ 4mA 95nC @ 10V 3600pF @ 25V 10V ±20V
BSP300L6327HUSA1
RFQ
VIEW
RFQ
2,999
In-stock
Infineon Technologies MOSFET N-CH 800V 190MA SOT-223 SIPMOS® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 800V 190mA (Ta) 20 Ohm @ 190mA, 10V 4V @ 1mA - 230pF @ 25V 10V ±20V
APT17N80SC3G
RFQ
VIEW
RFQ
1,750
In-stock
Microsemi Corporation MOSFET N-CH 800V 17A D3PAK CoolMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA D3Pak 208W (Tc) N-Channel - 800V 17A (Tc) 290 mOhm @ 11A, 10V 3.9V @ 1mA 90nC @ 10V 2250pF @ 25V 10V ±20V