- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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2 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
2,366
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 7.2A PS-8 | U-MOSIII | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | PS-8 (2.9x2.4) | 1W (Ta), 30W (Tc) | N-Channel | - | 30V | 7.2A (Ta) | 16 mOhm @ 3.6A, 10V | 2.3V @ 1mA | 11nC @ 10V | 640pF @ 10V | 4.5V, 10V | ±20V | |||
|
VIEW |
837
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 40V 8A SOP8 2-6J1B | U-MOSIII | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP (5.5x6.0) | 1W (Ta) | P-Channel | - | 40V | 8A (Ta) | 25 mOhm @ 4A, 10V | 2V @ 1mA | 48nC @ 10V | 2180pF @ 10V | 4V, 10V | ±20V | |||
