- Series :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
969
In-stock
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Infineon Technologies | MOSFET N-CH 30V 64A D2PAK-5 | FETKY™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.1W (Ta), 89W (Tc) | N-Channel | - | 30V | 64A (Tc) | 14 mOhm @ 34A, 10V | 1V @ 250µA | 43nC @ 4.5V | 1900pF @ 25V | 4.5V, 10V | ±16V | ||||
VIEW |
3,770
In-stock
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Infineon Technologies | MOSFET N-CH 20V 48A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 69W (Tc) | N-Channel | - | 20V | 48A (Tc) | 16 mOhm @ 29A, 7V | 700mV @ 250µA | 43nC @ 4.5V | 2000pF @ 15V | 4.5V, 7V | ±10V | ||||
VIEW |
3,651
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 64A D2PAK | FETKY™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.1W (Ta), 89W (Tc) | N-Channel | - | 30V | 64A (Tc) | 14 mOhm @ 34A, 10V | 1V @ 250µA | 43nC @ 4.5V | 1900pF @ 25V | 4.5V, 10V | ±16V |