Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
TPH5200FNH,L1Q
RFQ
VIEW
RFQ
1,873
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 250V 26A SOP8 U-MOSVIII-H Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 78W (Tc) N-Channel - 250V 26A (Tc) 52 mOhm @ 13A, 10V 4V @ 1mA 22nC @ 10V 2200pF @ 100V 10V ±20V
TPH5200FNH,L1Q
RFQ
VIEW
RFQ
2,139
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 250V 26A SOP8 U-MOSVIII-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 78W (Tc) N-Channel - 250V 26A (Tc) 52 mOhm @ 13A, 10V 4V @ 1mA 22nC @ 10V 2200pF @ 100V 10V ±20V
TPH5200FNH,L1Q
RFQ
VIEW
RFQ
2,952
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 250V 26A SOP8 U-MOSVIII-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 78W (Tc) N-Channel - 250V 26A (Tc) 52 mOhm @ 13A, 10V 4V @ 1mA 22nC @ 10V 2200pF @ 100V 10V ±20V
TPH2900ENH,L1Q
RFQ
VIEW
RFQ
1,235
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 200V 33A SOP8 U-MOSVIII-H Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 78W (Tc) N-Channel - 200V 33A (Ta) 29 mOhm @ 16.5A, 10V 4V @ 1mA 22nC @ 10V 2200pF @ 100V 10V ±20V
TPH2900ENH,L1Q
RFQ
VIEW
RFQ
1,287
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 200V 33A SOP8 U-MOSVIII-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 78W (Tc) N-Channel - 200V 33A (Ta) 29 mOhm @ 16.5A, 10V 4V @ 1mA 22nC @ 10V 2200pF @ 100V 10V ±20V
TPH2900ENH,L1Q
RFQ
VIEW
RFQ
2,667
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 200V 33A SOP8 U-MOSVIII-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 78W (Tc) N-Channel - 200V 33A (Ta) 29 mOhm @ 16.5A, 10V 4V @ 1mA 22nC @ 10V 2200pF @ 100V 10V ±20V
TPH1R712MD,L1Q
RFQ
VIEW
RFQ
2,358
In-stock
Toshiba Semiconductor and Storage MOSFET P-CH 20V 60A 8SOP ADV U-MOSVI Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 78W (Tc) P-Channel - 20V 60A (Tc) 1.7 mOhm @ 30A, 4.5V 1.2V @ 1mA 182nC @ 5V 10900pF @ 10V 2.5V, 4.5V ±12V
TPH1R712MD,L1Q
RFQ
VIEW
RFQ
676
In-stock
Toshiba Semiconductor and Storage MOSFET P-CH 20V 60A 8SOP ADV U-MOSVI Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 78W (Tc) P-Channel - 20V 60A (Tc) 1.7 mOhm @ 30A, 4.5V 1.2V @ 1mA 182nC @ 5V 10900pF @ 10V 2.5V, 4.5V ±12V
TPH1R712MD,L1Q
RFQ
VIEW
RFQ
2,334
In-stock
Toshiba Semiconductor and Storage MOSFET P-CH 20V 60A 8SOP ADV U-MOSVI Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 78W (Tc) P-Channel - 20V 60A (Tc) 1.7 mOhm @ 30A, 4.5V 1.2V @ 1mA 182nC @ 5V 10900pF @ 10V 2.5V, 4.5V ±12V