Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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2,632
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Toshiba Semiconductor and Storage X35 PB-F POWER MOSFET TRANSISTOR U-MOSIX-H Active - MOSFET (Metal Oxide) 175°C Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.8W (Ta), 81W (Tc) N-Channel - 40V 87A (Ta), 49A (Tc) 6 mOhm @ 24.5A, 10V 2.4V @ 200µA 30nC @ 10V 2700pF @ 20V 4.5V, 10V ±20V
TPHR6503PL,L1Q
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2,003
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 150A 8SOP U-MOSIX-H Active Digi-Reel® MOSFET (Metal Oxide) 175°C Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 960mW (Ta), 170W (Tc) N-Channel - 30V 150A (Tc) 0.65 mOhm @ 50A, 10V 2.1V @ 1mA 110nC @ 10V 10000pF @ 15V 4.5V, 10V ±20V
TPHR6503PL,L1Q
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2,015
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 150A 8SOP U-MOSIX-H Active Cut Tape (CT) MOSFET (Metal Oxide) 175°C Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 960mW (Ta), 170W (Tc) N-Channel - 30V 150A (Tc) 0.65 mOhm @ 50A, 10V 2.1V @ 1mA 110nC @ 10V 10000pF @ 15V 4.5V, 10V ±20V
TPHR6503PL,L1Q
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787
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 150A 8SOP U-MOSIX-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 175°C Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 960mW (Ta), 170W (Tc) N-Channel - 30V 150A (Tc) 0.65 mOhm @ 50A, 10V 2.1V @ 1mA 110nC @ 10V 10000pF @ 15V 4.5V, 10V ±20V
TPH3R704PL,L1Q
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2,530
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Toshiba Semiconductor and Storage MOSFET N-CH 40V 92A TSON U-MOSIX-H Active Digi-Reel® MOSFET (Metal Oxide) 175°C Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 960mW (Ta), 81W (Tc) N-Channel - 40V 92A (Tc) 3.7 mOhm @ 46A, 10V 2.4V @ 0.2mA 27nC @ 10V 2500pF @ 20V 4.5V, 10V ±20V
TPH3R704PL,L1Q
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2,049
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Toshiba Semiconductor and Storage MOSFET N-CH 40V 92A TSON U-MOSIX-H Active Cut Tape (CT) MOSFET (Metal Oxide) 175°C Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 960mW (Ta), 81W (Tc) N-Channel - 40V 92A (Tc) 3.7 mOhm @ 46A, 10V 2.4V @ 0.2mA 27nC @ 10V 2500pF @ 20V 4.5V, 10V ±20V
TPH3R704PL,L1Q
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RFQ
667
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Toshiba Semiconductor and Storage MOSFET N-CH 40V 92A TSON U-MOSIX-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 175°C Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 960mW (Ta), 81W (Tc) N-Channel - 40V 92A (Tc) 3.7 mOhm @ 46A, 10V 2.4V @ 0.2mA 27nC @ 10V 2500pF @ 20V 4.5V, 10V ±20V