Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
NTD60N03T4
RFQ
VIEW
RFQ
3,415
In-stock
ON Semiconductor MOSFET N-CH 28V 60A DPAK - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 75W (Tc) N-Channel - 28V 60A (Tc) 7.5 mOhm @ 30A, 10V 3V @ 250µA 30nC @ 4.5V 2150pF @ 24V 4.5V, 10V ±20V
STD35P6LLF6
RFQ
VIEW
RFQ
1,757
In-stock
STMicroelectronics MOSFET P-CH 60V 35A DPAK STripFET™ F6 Active Digi-Reel® MOSFET (Metal Oxide) 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 70W (Tc) P-Channel - 60V 35A (Tc) 28 mOhm @ 17.5A, 10V 2.5V @ 250µA 30nC @ 4.5V 3780pF @ 25V 4.5V, 10V ±20V
STD35P6LLF6
RFQ
VIEW
RFQ
3,443
In-stock
STMicroelectronics MOSFET P-CH 60V 35A DPAK STripFET™ F6 Active Cut Tape (CT) MOSFET (Metal Oxide) 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 70W (Tc) P-Channel - 60V 35A (Tc) 28 mOhm @ 17.5A, 10V 2.5V @ 250µA 30nC @ 4.5V 3780pF @ 25V 4.5V, 10V ±20V
STD35P6LLF6
RFQ
VIEW
RFQ
2,318
In-stock
STMicroelectronics MOSFET P-CH 60V 35A DPAK STripFET™ F6 Active Tape & Reel (TR) MOSFET (Metal Oxide) 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 70W (Tc) P-Channel - 60V 35A (Tc) 28 mOhm @ 17.5A, 10V 2.5V @ 250µA 30nC @ 4.5V 3780pF @ 25V 4.5V, 10V ±20V