Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
BUK9E08-55B,127
RFQ
VIEW
RFQ
1,737
In-stock
Nexperia USA Inc. MOSFET N-CH 55V 75A I2PAK Automotive, AEC-Q101, TrenchMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 203W (Tc) N-Channel - 55V 75A (Tc) 7 mOhm @ 25A, 10V 2V @ 1mA 45nC @ 5V 5280pF @ 25V 5V, 10V ±15V
STB80NF55L-08-1
RFQ
VIEW
RFQ
731
In-stock
STMicroelectronics MOSFET N-CH 55V 80A I2PAK STripFET™ II Obsolete Tube MOSFET (Metal Oxide) 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 300W (Tc) N-Channel - 55V 80A (Tc) 8 mOhm @ 40A, 10V 2.5V @ 250µA 100nC @ 4.5V 4350pF @ 25V 5V, 10V ±16V